37 citations · 80 across the 6 of their papers we have counts for
6 papers
Formation of graphene nanoribbons on the macrofacets of vicinal 6H-SiC(0001) surfaces
Kohei Fukuma, Anton Visikovskiy, Takushi Iimori +2
Thermal decomposition of vicinal 6H-SiC(0001) surfaces with off-angles toward the direction results in the appearance of pairs of (0001) macroterraces and $(1\bar{1}…
Twisted bilayer graphene fabricated by direct bonding in a high vacuum
Hitoshi Imamura, Anton Visikovskiy, Ryosuke Uotani +10
Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TB…
Ultrafast unbalanced electron distributions in quasicrystalline 30° twisted bilayer graphene
T. Suzuki, T. Iimori, S. J. Ahn +15
Layers of twisted bilayer graphene exhibit varieties of exotic quantum phenomena1-5. Today, the twist angle Θ has become an important degree of freedom for exploring novel states o…
Computational study of heavy group IV elements (Ge, Sn, Pb) triangular lattice atomic layers on SiC(0001) surface
Anton Visikovskiy, Shingo Hayashi, Takashi Kajiwara +3
Group IV heavy elements atomic layers are expected to show an interesting physical properties due to their large spin-orbit coupling (SOC). Using density functional theory (DFT) ca…
Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy
Takashi Kajiwara, Yuzuru Nakamori, Anton Visikovskiy +5
We present a new method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consist of ordered pairs of (0…
A breakthrough toward wafer-size epitaxial graphene transfer
A. Hashimoto, H. Terasaki, K. Morita +2
The formation of graphene on any desirable substrate is extremely essential for the successful replacement of Si with graphene in all technological applications in the beyond-CMOS…