Large-area microwire MoSi single-photon detectors at 1550 nm wavelength

Ilya Charaev; Yukimi Morimoto; Andrew Dane; Akshay Agarwal; Marco Colangelo; Karl K. Berggren

doi:10.1063/5.0005439

paper

Large-area microwire MoSi single-photon detectors at 1550 nm wavelength

arXiv:2002.09088 · doi:10.1063/5.0005439

Abstract

We demonstrate saturated internal detection efficiency at 1550 nm wavelengths for meander-shaped superconducting nanowire single-photon detectors made of 3 nm thick MoSi films with widths of 1 and 3 $μ m$ , and active areas up to 400 by 400 $μ m^{2}$ . Despite hairpin turns and a large number of squares (up to $1 0^{4}$ ) in the device, the dark count rate was measured to be ~10 $^{3}$ cps at 99% of the switching current. This value is about two orders of magnitude lower than results reported recently for short MoSi devices with shunt resistors. We also found that 5 nm thick MoSi detectors with the same geometry were insensitive to single near-infrared photons, which may be associated with different levels of suppression of the superconducting order parameter. However, our results obtained on 3 nm thick MoSi devices are in a good agreement with predictions in the frame of a kinetic-equation approach.

Large-area microwire MoSi single-photon detectors at 1550 nm wavelength

Abstract

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