paper

Physical properties of amorphous molybdenum silicide films for single photon detectors

arXiv:2104.06905 · doi:10.1088/1361-6668/ac1524

Abstract

We systematically investigated the physical properties of amorphous MoSi films deposited by the magnetron co-sputtering technique. The critical temperature of Mo Si films increases gradually with the stoichiometry x, and the highest =7.9 K was found in Mo Si. Beyond =0.83, preformed Cooper pairs and superconducting domains persist in the films, despite the superconducting state with perfect zero-resistivity is absent. The thick films of Mo Si show surprising degradation in which the onset of zero-resistivity is suppressed below 2 K. The thin Mo Si films, however, reveal robust superconductivity even with thickness d1 nm. We also characterized wide microwires based on the 2 nm thin Mo Si films with widths 40 and 60 m, which show single-photon sensitivity at 780 nm and 1550 nm wavelength

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