Spin-dependent Schottky barriers and vacancy-induced spin-selective Ohmic contacts in magnetic vdW heterostructures

Abstract

The 2D ferromagnets, such as CrX3 (X=Cl, Br and I), have been attracting extensive attentions since they provide novel platforms to fundamental physics and device applications. Integrating CrX3 with other electrodes and substrates is an essential step to their device realization. Therefore, it is important to understand the interfacial properties between CrX3 and other 2D materials. As an illustrative example, we have investigated the heterostructures between CrX3 and graphene (CrX3/Gr) from firstprinciples. We find unique Schottky contacts type with strongly spin-dependent barriers in CrX3/Gr. This can be understood by synergistic effects between the exchange splitting of semiconductor band of CrX3 and interlayer charge transfer. The spinasymmetry of Schottky barriers may result in different tunneling rates of spin-up and down electrons, and then lead to spin-polarized current, namely spin-filter (SF) effect. Moreover, by introducing X vacancy into CrX3/Gr, an Ohmic contact forms in spin-up direction. It may enhance the transport of spin-up electrons, and improve SF effect. Our systematic study reveals the unique interfacial properties of CrX3/Gr, and provides a theoretical view to the understanding and designing of spintronics device based on magnetic vdW heterostructures.

References in corpus (20)

• Spintronics: Fundamentals and applications
• 2D materials and van der Waals heterostructures
• Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
• Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures
• Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling
• Electric-field switching of two-dimensional van der Waals magnets
• Robust Intrinsic Ferromagnetism and Half Semiconductivity in Stable Two-Dimensional Single-Layer Chromium Trihalides
• On the origin of magnetic anisotropy in two dimensional CrI${}_3$
• Strain-tunable magnetic anisotropy in monolayer CrCl${}_3$, CrBr${}_3$, and CrI${}_3$
• Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI${}_3$
• Designing electrical contacts to MoS${}_2$ monolayers: A computational study
• Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator
• Evolution of interlayer and intralayer magnetism in three atomically thin chromium trihalides
• Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3
• One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure
• Strain-tunable magnetic and electronic properties of monolayer CrI3
• Strong magnetization and Chern insulators in compressed graphene/CrI${}_3$ van der Waals heterostructures
• Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides
• Interlayer coupling enhancement in graphene/hexagonal boron nitride heterostructures by intercalated defects and vacancies
• The Enhanced Ferromagnetism of Single-Layer CrX3 (X=Br and I) by Van der Waals Engineering

Cited by in corpus (1)

• Structural distortion induced Dzyaloshinskii-Moriya interaction in monolayer CrI3 at van der Waals heterostructures