Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure

Abstract

Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing BN for high quality graphene/BN heterostructures. The process is not only more scalable, but also allows to grow isotopically purified BN crystals. We employ Raman spectroscopy, cathodoluminescence, and electronic transport measurements to show the high-quality of such monoisotopic BN and its potential for graphene-based heterostructures. The excellent electronic performance of our heterostructures is demonstrated by well developed fractional quantum Hall states, ballistic transport over distances around $10\mu \mathrm{m}$ at low temperatures and electron-phonon scattering limited transport at room temperature.

7 pages, 4 figures

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Cited by in corpus (9)

• Wafer-scale integration of graphene-based photonic devices
• High-quality electrical transport using scalable CVD graphene
• Scalable High-Mobility Graphene/hBN Heterostructures
• Phonon-mediated room-temperature quantum Hall transport in graphene
• Long-Term Environmental Stability of Nitrogen-Healed Black Phosphorus
• Chemically detaching hBN crystals grown at atmospheric pressure and high temperature for high-performance graphene devices
• Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures
• Specular electron focusing between gate-defined quantum point contacts in bilayer graphene
• Radiative lifetime of free excitons in hexagonal boron nitride