Defects in Cd3As2 Epilayers Via Molecular Beam Epitaxy and Strategies for Reducing Them
arXiv:1909.01450 · doi:10.1103/PhysRevMaterials.3.121201
Abstract
Molecular beam epitaxy offers an exciting avenue for investigating the behavior of topological semimetal Cd3As2, by providing routes for doping, alloying, strain engineering, and heterostructure formation. To date, however, minimal exploration has been devoted to the impact of defects that are incorporated into epilayers due to contraints imposed by the substrate and narrow growth window. Here, we use a combination of lattice-matched ZnxCd1-xTe buffer layers, miscut substrates and broadband illumination to study how dislocations, twins and point defects influence the electron mobility of Cd3As2. A combination of defect suppression approaches produces Cd3As2 epilayers with electron mobilities upwards of 15,000 cm2/V-s at room temperature.
References in corpus (13)
- Three Dimensional Dirac Semimetal and Quantum Transports in Cd3As2
- Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal CdAs
- Observation of a topological 3D Dirac semimetal phase in high-mobility Cd3As2
- Classification of stable three-dimensional Dirac semimetals with nontrivial topology
- Topological Semimetals
- Quantum transport evidence for a three-dimensional Dirac semimetal phase in Cd3As2
- Transport evidence for Fermi-arc mediated chirality transfer in the Dirac semimetal CdAs
- Cd3As2 is Centrosymmetric
- Observation of the quantum Hall effect in confined films of the three-dimensional Dirac semimetal Cd3As2
- Suppression of compensating native defect formation during semiconductor processing via excess carriers
- Molecular beam epitaxy of three-dimensionally thick Dirac semimetal Cd3As2 films
- Structural characterisation of high-mobility Cd3As2 films crystallised on SrTiO3
- Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes