66 citations · 93 across the 8 of their papers we have counts for
8 papers
Nonresonant optomechanical control of structural phases
Jiaojian Shi, Yijing Huang, Christian Heide +24
Optical tweezers demonstrate how light can exert forces to trap, repel, and manipulate microscopic particles without absorption. Recent theory has suggested that such forces can ex…
Three-dimensional integration enables ultra-low-noise, isolator-free Si photonics
Chao Xiang, Warren Jin, Osama Terra +12
While photonic integrated circuits (PICs) are being widely used in applications such as telecommunications and datacenter interconnects, PICs capable of replacing bulk optics and f…
Dislocation-induced structural and luminescence degradation in InAs quantum dot emitters on silicon
Eamonn T. Hughes, Gunnar Kusch, Jennifer Selvidge +6
We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth morphology in InAs quantum dots (QD) grown on silicon. These heterostructures a…
Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates
Brian B. Haidet, Jarod Meyer, Pooja Reddy +2
PbSe and related IV-VI rocksalt-structure semiconductors have important electronic properties that may be controlled by epitaxial strain and interfaces, thus harnessed in an emergi…
Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers
Chen Shang, Kaiyin Feng, Eamonn T. Hughes +9
Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developme…
Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs
Jarod Meyer, Aaron J. Muhowski, Leland J. Nordin +4
We report on photoluminescence in the 3-7 m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular b…