Berry phase manipulation in ultrathin SrRuO films
arXiv:1907.07579 · doi:10.1103/PhysRevB.102.220406
Abstract
A notion of the Berry phase is a powerful means to unravel the non-trivial role of topology in various novel phenomena observed in chiral magnetic materials and structures. A celebrated example is the intrinsic anomalous Hall effect (AHE) driven by the non-vanishing Berry phase in the momentum space. As the AHE is highly dependent on details of the band structure near the Fermi edge, the Berry phase and AHE can be altered in thin films whose chemical potential is tunable by dimensionality and disorder. Here, we demonstrate that in ultrathin SrRuO films the Berry phase can be effectively manipulated by the effects of disorder on the intrinsic Berry phase contribution to the AHE, which is corroborated by our numerically exact calculations. In addition, our findings provide ample experimental evidence for the superficial nature of the topological Hall effect attribution to the protected spin texture and instead lend strong support to the multi-channel AHE scenario in ultrathin SrRuO.
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- Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides
- Stable hump-like Hall effect and non-coplanar spin textures in SrRuO ultrathin film
- Resonant optical topological Hall conductivity from skyrmions
- Domain wall skew scattering in ferromagnetic Weyl metals
- Capping and gate control of anomalous Hall effect and hump structure in ultra-thin SrRuO films
- Magnetism and berry phase manipulation in an emergent structure of perovskite ruthenate by (111) strain engineering
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- Magnetic interlayer coupling between ferromagnetic SrRuO layers through a SrIrO spacer
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- Non-uniform magnetization profile in ferromagnetic heterostructures leading to topological Hall effect like signatures