An In-situ Annealing effect of Graphene-Graphene Interlayer Conduction
arXiv:1903.09899 · doi:10.1016/j.carbon.2019.07.036
Abstract
An interlayer distance modulation in twisted bilayer graphene is reported. This is achieved by an in-situ annealing technique. The transformation of systematic vacuum and hydrogen annealing effects in twisted bilayer CVD graphene on SiO2 surface is reported based on experimental results. Incoherent interlayer conduction is observed in the twisted bilayer device. In-situ annealing efficiently removes the residues in the graphene-to-graphene interface and enhances the interlayer conduction. We demonstrate graphene-to-graphene interlayer resistance modulated by an order of magnetite at 5 K. We also report on the behavior of molecular hydrogen on graphene interlayer using the gate voltage-dependent resistance as a function of temperature at atmospheric pressure. It was observed that interlayer conduction in hydrogen/argon gas ambient is reduced. Results imply that modulation in the interlayer distance of graphene-to-graphene junction, as determined by the transport measurement investigation. Overall this result leads to the possibility of making electrically tunable devices using twisted bilayer graphene.
arXiv comment21 Pages, 6 Figures
References in corpus (32)
- The electronic properties of graphene
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Energy Band Gap Engineering of Graphene Nanoribbons
- Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
- Control of graphene's properties by reversible hydrogenation
- Moire bands in twisted double-layer graphene
- Tuning superconductivity in twisted bilayer graphene
- Graphene bilayer with a twist: electronic structure
- Atomic Structure of Graphene on SiO2
- Observation of Van Hove singularities in twisted graphene layers
- Flat Bands in Slightly Twisted Bilayer Graphene
- Hydrogen on graphene: Electronic structure, total energy, structural distortions, and magnetism from first-principles calculations
- Localization of Dirac electrons by Moire patterns in graphene bilayers
- Continuum Model of the Twisted Bilayer
- Raman spectroscopy study of rotated double-layer graphene: Misorientation-angle dependence of electronic structure
- Commensuration and Interlayer Coherence in Twisted Bilayer Graphene
- Electronic structure of turbostratic graphene
- Superlattice-induced insulating states and valley-protected orbits in twisted bilayer graphene
- Band Structure of ABC-Stacked Graphene Trilayers
- Numerical studies of confined states in rotated bilayers of graphene
- Moire Butterflies
- Transport Between Twisted Graphene Layers
- Quasiparticle Chirality in Epitaxial Graphene Probed at the Nanometer Scale
- Band Symmetries and Singularities in Twisted Multilayer Graphene
- Charge inversion and topological phase transition at a twist angle induced van Hove singularity of bilayer graphene
- Breakdown of the interlayer coherence in twisted bilayer graphene
- Field-induced metal-insulator Field-induced metal-insulator transition in the c-axis resistivity of graphite
- Electronic Properties of Twisted Trilayer Graphene
- Phonon mediated interlayer conductance in twisted graphene bilayers
- Theory of the Raman spectrum of rotated double-layer graphene
- Berry Phase Transition in Twisted Bilayer Graphene
- Broken-Symmetry Quantum Hall States in Twisted Bilayer Graphene