Deterministic single ion implantation of rare-earth ions for nanometer resolution colour center generation

Abstract

Single dopant atoms or dopant-related defect centers in a solid state matrix provide an attractive platform for quantum simulation of topological states, for quantum computing and communication, due to their potential to realize a scalable architecture compatible with electronic and photonic integrated circuits. The production of such quantum devices calls for deterministic single atom doping techniques because conventional stochastic doping techniques are cannot deliver appropriate architectures. Here, we present the fabrication of arrays of praseodymium color centers in YAG substrates, using a deterministic source of single laser-cooled Pr${}^{+}$ ions. The beam of single Pr${}^{+}$ ions is extracted from a Paul trap and focused down to 30(9) nm. Using a confocal microscope we determine a conversion yield into active color centers up to 50% and realizing a placement accuracy of better than 50 nm.

arXiv comment9 pages, 7 figures

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• Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon
• Fabrication of ${}^{15}{\text{NV}}^{-}$ centers in diamond using a deterministic single ion implanter
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• Roadmap on Atomic-scale Semiconductor Devices
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• Optical and Zeeman spectroscopy of individual Er ion pairs in silicon
• Single Ion Thermal Wave Packet Analyzed Via Time-Of-Flight Detection
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• Entanglement structures in disordered chains of nitrogen-vacancy centers
• Molecular entanglement as a signature of the Unruh effect
• Tailored Ion Beam for Precise Color Center Creation
• Deterministic relation between optical polarization and lattice symmetry revealed in ion-doped single microcrystals
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• Designing gate operations for single ion quantum computing in rare-earth-ion-doped crystals