Fabrication of centers in diamond using a deterministic single ion implanter
arXiv:2101.01979 · doi:10.1088/1367-2630/ac0753
Abstract
Nitrogen Vacancy (NV) centers in diamond are a platform for several important quantum technologies, including sensing, communication and elementary quantum processors. In this letter we demonstrate the creation of NV centers by implantation using a deterministic single ion source. For this we sympathetically laser-cool single molecular ions in a Paul trap and extract them at an energy of 5.9\,keV. Subsequently the ions are focused with a lateral resolution of 121(35)\,nm and are implanted into a diamond substrate without any spatial filtering by apertures or masks. After high-temperature annealing, we detect the NV centers in a confocal microscope and determine a conversion efficiency of about 0.6\,. The centers are characterized by optically detected magnetic resonance (ODMR) on the hyperfine transition and coherence time.
arXiv comment13 pages, 7 figures
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Cited by in corpus (7)
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- Roadmap on Atomic-scale Semiconductor Devices
- Spin squeezing in an ensemble of nitrogen-vacancy centers in diamond
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