Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy

Abstract

We report the growth of self-assembled Bi2Se3 quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs after anneal of Bismuth droplets under Selenium flux. Characterization by atomic force microscopy, scanning electron microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray reflectance spectroscopy is presented. The quantum dots are crystalline, with hexagonal shape, and have average dimensions of 12 nm height (12 quintuple layers) and 46 nm width, and a density of $8.5\cdot 10^{9}c{m}^{-2}$. This droplet growth technique provides a means to produce topological insulator QDs in a reproducible and controllable way, providing convenient access to a promising quantum material with singular spin properties.

arXiv comment13 pages, 5 figures, submitted material

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Cited by in corpus (8)

• Semiconductor materials stacks for quantum dot spin qubits
• Optimization of the growth of the van der Waals materials Bi2Se3 and (Bi0.5In0.5)2Se3 by molecular beam epitaxy
• Optical response of a topological-insulator--quantum-dot hybrid interacting with a probe electric field
• Absence of equilibrium edge currents in theoretical models of topological insulators
• Spherical topological-insulator nanoparticles: Quantum size effects and optical transitions
• Growth of Topological Insulator Bi2Se3 Particles on GaAs via Droplet Epitaxy
• Fano resonances induced by the topological magnetoelectric effect
• Spectroscopy of van der Waals nanomaterials: Opportunities and Challenges