Band Gap Modulation of Graphene on SiC
arXiv:1810.01918 · doi:10.1140/epjb/e2018-90154-1
Abstract
A recipe on how to engineer a band gap in the energy spectrum for the carriers in graphene is conveyed. It is supported by a series of numerical simulations inspired by an analytical result based on the opening of a band gap in periodically corrugated graphene, e.g. the buffer layer grown on SiC at high temperatures.
arXiv commentaccepted in EPJ B
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