Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence

Abstract

Since the advent of graphene, a variety of studies have been performed to elucidate its fundamental physics, or to explore its practical applications. Gate-tunable resistance is one of the most important properties of graphene and has been studied in 1-3 layer graphene in a number of efforts to control the band gap to obtain a large on-off ratio. On the other hand, the transport property of multilayer graphene with more than three layers is less well understood. Here we show a new aspect of multilayer graphene. We found that four-layer graphene shows intrinsic peak structures in the gate voltage dependence of its resistance at zero magnetic field. Measurement of quantum oscillations in magnetic field confirmed that the peaks originate from the specific band structure of graphene and appear at the carrier density for the bottoms of conduction bands and valence bands. The intrinsic peak structures should generally be observed in AB-stacked multilayer graphene. The present results would be significant for understanding the physics of graphene and making graphene FET devices.

References in corpus (24)

• The electronic properties of graphene
• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• The Raman Fingerprint of Graphene
• Ultrahigh electron mobility in suspended graphene
• Boron nitride substrates for high-quality graphene electronics
• Electronic transport in two dimensional graphene
• Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor
• Asymmetry gap in the electronic band structure of bilayer graphene
• Measurement of Scattering Rate and Minimum Conductivity in Graphene
• Atomically thin boron nitride: a tunnelling barrier for graphene devices
• Observation of an electrically tunable band gap in trilayer graphene
• A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride
• Transport in Bilayer Graphene: Calculations within a self-consistent Born approximation
• Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene
• Electronic compressibility of layer polarized bilayer graphene
• Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric field
• Stacking-order dependent transport properties of trilayer graphene
• Excitation Energy Dependent Raman Signatures of ABA- and ABC-stacked Few-layer Graphene
• Landau level spectra and the quantum Hall effect of multilayer graphene
• Insulating state in tetralayers reveals an even-odd interaction effect in multilayer graphene
• Detection of Interlayer Interaction in Few-layer Graphene through Landau Level Spectroscopy
• Imaging Stacking Order in Few-Layer Graphene
• Interaction-induced insulating state in thick multilayer graphene
• Interaction-induced insulating states in multilayer graphenes

Cited by in corpus (8)

• Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers
• Low energy band structure in Bernal stacked hexlayer graphene: Landau fan diagram and resistance ridge
• Magnetotransport study of the mini-Dirac cone in AB-stacked four- to six-layer graphene under perpendicular electric field
• Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing
• On dielectric screening in twisted double bilayer graphene
• Multiband ballistic transport and anisotropic commensurability magnetoresistance in antidot lattices of AB-stacked trilayer graphene
• Magnetoconductance Oscillations in Electron-hole Hybridization Gaps and Valley Splittings in Tetralayer Graphene
• Unconventional satellite resistance peaks in moiré superlattice of h-BN/ AB-stacked tetralayer-graphene heterostructure