Tunneling spectroscopy of gate-induced superconductivity in MoS
arXiv:1806.03222 · doi:10.1038/s41565-018-0122-2
Abstract
The ability to gate-induce superconductivity by electrostatic charge accumulation is a recent breakthrough in physics and nano-electronics. With the exception of LaAlO/SrTiO interfaces, experiments on gate-induced superconductors have been largely confined to resistance measurements, which provide very limited information about the superconducting state. Here, we explore gate-induced superconductivity in MoS by performing tunneling spectroscopy to determine the energy-dependent density of states (DOS) for different levels of electron density . In the superconducting state, the DOS is strongly suppressed at energy smaller than the gap, Δ, which is maximum (Δ~ 2 meV) for of ~ 10 cm and decreases monotonously for larger . A perpendicular magnetic field generates states at that fill the gap, but a 20% DOS suppression of superconducting origin unexpectedly persists much above the transport critical field. Conversely, an in-plane field up to 10 T leaves the DOS entirely unchanged. Our measurements exclude that the superconducting state in MoS is fully gapped and reveal the presence of a DOS that vanishes linearly with energy, the explanation of which requires going beyond a conventional, purely phonon-driven Bardeen-Cooper-Schrieffer mechanism.
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