Multi-carrier transport in ZrTe5 film

Abstract

The single layer of Zirconium pentatelluride (ZrTe5) has been predicted to be a large-gap two-dimensional (2D) topological insulator, which has attracted particular attention in the topological phase transitions and potential device application. Here we investigated the transport properties in ZrTe5 films with the dependence of thickness from a few nm to several hundred nm. We find that the temperature of the resistivity anomaly's peak (Tp) is inclining to increase as the thickness decreases, and around a critical thickness of ~40 nm, the dominating carriers in the films change from n-type to p-type. With comprehensive studying of the Shubnikov-de Hass (SdH) oscillations and Hall resistance at variable temperatures, we demonstrate the multi-carrier transport instinct in the thin films. We extract the carrier densities and mobilities of two majority carriers using the simplified two-carrier model. The electron carriers can be attributed to the Dirac band with a non-trivial Berry's phase π, while the hole carriers may originate from the surface chemical reaction or unintentional doping during the microfabrication process. It is necessary to encapsulate ZrTe5 film in the inert or vacuum environment to make a substantial improvement in the device quality.

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Cited by in corpus (5)

• Magnetoterahertz Response and Faraday Rotation from Massive Dirac Fermions in the Topological Crystalline Insulator Pb${}_{0.5}$Sn${}_{0.5}$Te
• Electron-electron interactions and weak anti-localization in few-layer ZrTe5 devices
• Gate-tunable multiband transport in ZrTe5 thin devices
• Optical conductivity and resistivity in a four-band model for ZrTe${}_5$ from ab-initio calculations
• Signature of pressure-induced topological phase transition in ZrTe${}_5$