Highly efficient optical pumping of spin defects in silicon carbide for stimulated microwave emission

Abstract

We investigate the pump efficiency of silicon vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier.

8 pages, 6 figures

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• Hybrid nanophotonic-nanomagnonic SiC-YiG quantum sensor: I/ theoretical design and properties
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