Transparent perovskite barium stannate with high electron mobility and thermal stability

Abstract

Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have become necessary materials for a variety of applications in the information and energy technologies, ranging from transparent electrodes to active electronics components. Perovskite barium stannate (BaSnO3), a new TCO or TOS system, is a potential platform for realizing optoelectronic devices and observing novel electronic quantum states due to its high electron mobility, excellent thermal stability, high transparency, structural versatility, and flexible doping controllability at room temperature. This article reviews recent progress in the doped BaSnO3 system, discussing the wide physical properties, electron-scattering mechanism, and demonstration of key semiconducting devices such as pn diodes and field-effect transistors. Moreover, we discuss the pathways to achieving two-dimensional electron gases at the interface between BaSnO3 and other perovskite oxides and describe remaining challenges for observing novel quantum phenomena at the heterointerface.

70 pages, 14 figures, 1 table

References in corpus (4)

• High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives
• High Mobility in a Stable Transparent Perovskite Oxide
• Physical properties of transparent perovskite oxides (Ba,La)SnO3 with high electrical mobility at room temperature
• Origin of the Superior Conductivity of Perovskite Ba(Sr)SnO3

Cited by in corpus (6)

• High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO${}_3$/SrZrO${}_3$ heterostructures
• A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity
• Employing High-temperature-grown SrZrO${}_3$ Buffer to Enhance the Electron Mobility in La:BaSnO${}_3$-based Heterostructures
• Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques
• Free-carrier screening unlocks high electron mobility in ultrawide bandgap semiconductor CaSnO${}_3$
• Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior