Strain Engineering a Charge Density Wave Phase in Transition Metal Dichalcogenide 1T-VSe
arXiv:1707.06890 · doi:10.1103/PhysRevMaterials.1.024005
Abstract
We report a rectangular charge density wave (CDW) phase in strained 1T-VSe thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a{\times}{\sqrt{3a}} periodicity, as opposed to the previously reported hexagonal structure in bulk crystals and exfoliated thin layered samples. Tunneling spectroscopy shows a strong modulation of the local density of states of the same CDW periodicity and an energy gap of meV. The CDW energy gap evolves into a full gap at temperatures below 500 mK, indicating a transition to an insulating phase at ultra-low temperatures. First-principles calculations confirm the stability of both and structures arising from soft modes in the phonon dispersion. The unconventional structure becomes preferred in the presence of strain, in agreement with experimental findings.
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