Magnetotransport in heterostructures of transition metal dichalcogenides and graphene
arXiv:1706.07189 · doi:10.1103/PhysRevB.96.125405
Abstract
We use a van-der-Waals pickup technique to fabricate different heterostructures containing WSe(WS) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts and a topgate was deposited. For graphene/WSe/SiO samples we observe mobilities of 12 000 cm/Vs. Magnetic field dependent resistance measurements on these samples show a peak in the conductivity at low magnetic field. This dip is attributed to the weak antilocalization (WAL) effect, stemming from spin-orbit coupling. Samples where graphene is encapsulated between WSe(WS) and hBN show a much higher mobility of up to 120 000 cm/Vs. However, in these samples no WAL peak can be observed. We attribute this to a transition from the diffusive to the quasiballistic regime. At low magnetic field a resistance peak appears, which we ascribe to a size effect, due to boundary scattering. Shubnikov-de Haas oscillations in fully encapsulated samples show all integer filling factors, due to complete lifting of the spin and valley degeneracy.
Revised version, accepted by Phys Rev B
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- Spin-split band hybridization in graphene proximitized with -RuCl nanosheets
- Spin Hall and inverse spin galvanic effects in graphene with strong interfacial spin-orbit coupling: a quasi-classical Green's function approach
- Effect of proximity-induced spin-orbit coupling in graphene mesoscopic billiards
- Proximity spin-orbit coupling in graphene on alloyed transition metal dichalcogenides