Writing and Reading antiferromagnetic MnAu: Néel spin-orbit torques and large anisotropic magnetoresistance
arXiv:1706.02482 · doi:10.1038/s41467-017-02780-x
Abstract
Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the same time active manipulation up to the natural THz dynamic speeds of antiferromagnets is possible, thus combining exceptional storage density and ultra-fast switching. However, the active manipulation and read-out of the Néel vector (staggered moment) orientation is challenging. Recent predictions have opened up a path based on a new spin-orbit torque, which couples directly to the Néel order parameter. This Néel spin-orbit torque was first experimentally demonstrated in a pioneering work using semimetallic CuMnAs. Here we demonstrate for MnAu, a good conductor with a high ordering temperature suitable for applications, reliable and reproducible switching using current pulses and readout by magnetoresistance measurements. The symmetry of the torques agrees with theoretical predictions and a large read-out magnetoresistance effect of more than ~ is reproduced by ab initio transport calculations.
5 pages, 4 figures
References in corpus (4)
- Spin-orbit coupling induced anisotropy effects in bimetallic antiferromagnets: A route towards antiferromagnetic spintronics
- Imaging current-induced switching of antiferromagnetic domains in CuMnAs
- Electric control of Dirac quasiparticles by spin-orbit torque in an antiferromagnet
- Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As
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