Optical charge state control of spin defects in 4H-SiC

Abstract

Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability of the qubits. We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy (VV) and silicon vacancy (Vsi), obtaining bidirectional optical charge conversion between the bright and dark states of these defects. We measure increased photoluminescence from VV ensembles by up to three orders of magnitude using near-ultraviolet excitation, depending on the substrate, and without degrading the electron spin coherence time. This charge conversion remains stable for hours at cryogenic temperatures, allowing spatial and persistent patterning of the relative charge state populations. We develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC.

10 pages, figures

References in corpus (7)

• Coherent control of single spins in silicon carbide at room temperature
• Isolated electron spins in silicon carbide with millisecond-coherence times
• High sensitivity magnetic imaging using an array of spins in diamond
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Low Temperature Studies of Charge Dynamics of Nitrogen-Vacancy Defect in Diamond
• Long-term data storage in diamond
• Optical switching of defect charge states in 4H-SiC

Cited by in corpus (5)

• Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide
• Optical switching of defect charge states in 4H-SiC
• Probing metastable space-charge potentials in a wide bandgap semiconductor
• SiC Cantilevers For Generating Uniaxial Stress
• High resolution imaging with anomalous saturated excitation