Valley Edelstein Effect in Monolayer Transition Metal Dichalcogenides
arXiv:1705.08224 · doi:10.1103/PhysRevB.98.035435
Abstract
In this work, we predict the emergence of the valley Edelstein Effect (VEE), which is an electric-field-induced spin polarization effect, in gated monolayer transition metal dichalcogenides (MTMDs). We found an unconventional valley-dependent response in which the spin-polarization is parallel to the applied electric field with opposite spin-polarization generated by opposite valleys. This is in sharp contrast to the conventional Edelstein effect in which the induced spin-polarization is perpendicular to the applied electric field. We identify the origin of VEE as combined effects of conventional Edelstein effect and valley-dependent Berry curvatures induced by coexisting Rashba and Ising SOCs in gated MTMDs. Experimental schemes to detect the VEE are also considered.
5+7 pages, 5+4 figures ; v3 a detection way of the VEE added
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- Second-order topological corner states in zigzag graphene nanoflake with different types of edge magnetic configurations
- Switch effect and - transition in Ising superconductor Josephson junctions
- Valley Edelstein Effect in Monolayer Transition Metal Dichalcogenides
- Moiré flat Chern bands and correlated quantum anomalous Hall states generated by spin-orbit couplings in twisted homobilayer MoS
- Unconventional gate voltage dependence of the charge conductance caused by spin-splitting Fermi surface by Rashba-type spin-orbit coupling
- Valley Pumping via Edge States and the Nonlocal Valley Hall Effect in Two-Dimensional Semiconductors