Non Volatile MoS${}_2$ Field Effect Transistors Directly Gated By Single Crystalline Epitaxial Ferroelectric

Abstract

We demonstrate non-volatile, n-type, back-gated, MoS${}_2$ transistors, placed directly on an epitaxial grown, single crystalline, PbZr${}_{0.2}$Ti${}_{0.8}$O${}_3$ (PZT) ferroelectric. The transistors show decent ON current (19 $\mu A/\mu$m), high on-off ratio (10${}^7$), and a subthreshold swing of (SS ~ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polarization can directly control the channel charge, showing a clear anti-clockwise hysteresis. We have selfconsistently confirmed the switching of the ferroelectric and corresponding change in channel current from a direct time-dependent measurement. Our results demonstrate that it is possible to obtain transistor operation directly on polar surfaces and therefore it should be possible to integrate 2D electronics with single crystalline functional oxides.

References in corpus (4)

• Mobility engineering and metal-insulator transition in monolayer MoS2
• Visibility of dichalcogenide nanolayers
• Probing the Electron States and Metal-Insulator Transition Mechanisms in Atomically Thin MoS2 Based on Vertical Heterostructures
• Unusual Resistance Hysteresis in n-Layer Graphene Field Effect Transistors Fabricated on Ferroelectric Pb(Zr_0.2Ti_0.8)O_3

Cited by in corpus (6)

• Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor
• Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
• Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures
• Two-dimensional layered materials meet perovskite oxides: A combination for high-performance electronic devices
• Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS${}_2$ Transistor
• Domain Wall Enabled Steep Slope Switching in MoS${}_2$ Transistors Towards Hysteresis-Free Operation