Justin Wong

most citedNon Volatile MoS

_{2}

Field Effect Transistors Directly Gated By Single Crystalline Epitaxial Ferroelectric

53 citations · 73 across the 3 of their papers we have counts for

collaborators

3 papers

physics.app-ph2018★ 1 cited

Breaking the fundamental energy dissipation limit in ferroelectric-dielectric capacitors

Justin C. Wong, Sayeef Salahuddin

Half of the energy is always lost when charging a capacitor. Even in the limit of vanishing resistance, half of the charging energy is still lost--to radiation instead of heat. Whi…

physics.app-ph2017★ 19 cited

Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS $_{2}$ Transistor

Zhongyuan Lu, Claudy Serrao, Asif I. Khan +4

We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS $_{2}$ transistor. A single crystalline, epitaxially grown, PbZr $_{0.2}$ Ti $_{0.8}$ O $_{3}$ …

physics.app-ph2017★ 53 cited

Non Volatile MoS $_{2}$ Field Effect Transistors Directly Gated By Single Crystalline Epitaxial Ferroelectric

Zhongyuan Lu, Claudy Serrao, Asif Islam Khan +6

We demonstrate non-volatile, n-type, back-gated, MoS $_{2}$ transistors, placed directly on an epitaxial grown, single crystalline, PbZr $_{0.2}$ Ti $_{0.8}$ O $_{3}$ (PZT) ferroelectric…

Breaking the fundamental energy dissipation limit in ferroelectric-dielectric capacitors

Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS2​ Transistor

Non Volatile MoS2​ Field Effect Transistors Directly Gated By Single Crystalline Epitaxial Ferroelectric

Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS $_{2}$ Transistor

Non Volatile MoS $_{2}$ Field Effect Transistors Directly Gated By Single Crystalline Epitaxial Ferroelectric