Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems
arXiv:1703.08405 · doi:10.1103/PhysRevB.95.245315
Abstract
Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with uncommon combination of long spin lifetime and high charge mobility, the drift transport allows us to determine the spin-orbit field and the spin mobility anisotropies. We used a random walk model to describe the system dynamics and found excellent agreement for the Rashba and Dresselhaus couplings. The proposed two-subband system displays a large tuning lever arm for the Rashba constant with gate voltage, which provides a new path towards a spin transistor. Furthermore, the data shows large spin mobility controlled by the spin-orbit constants setting the field along the direction perpendicular to the drift velocity. This work directly reveals the resistance experienced in the transport of a spin-polarized packet as a function of the strength of anisotropic spin-orbit fields.
6 pages, 4 figures
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Cited by in corpus (5)
- Electrical control of spin relaxation anisotropy during drift transport in a two-dimensional electron gas
- Spin drift-diffusion for two-subband quantum wells
- Charge-Spin Conversion in Two-Subband Quantum Wells with Conventional and Unconventional Rashba Spin-Orbit Coupling
- Experimental analysis of the spin-orbit coupling dependence on the drift velocity of a spin packet
- Numerical analysis of the spin-orbit coupling parameters in III-V quantum wells using 8-band Kane model and finite-difference method