Linear magnetoresistance and surface to bulk coupling in topological insulator thin films

Abstract

We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi2Se2Te and BiSbTeSe1.6 were grown using Pulsed Laser Deposition technique and subjected to transport measurements. Magnetotransport measurements indicate a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values. We present a careful analysis to explain the origin of LMR taking into consideration all the existing models of LMR. Here we consider that the bulk insulating states and the metallic surface states constitute two parallel conduction channels. Invoking this, we were able to explain linear magnetoresistance behavior as a competition between these parallel channels. We observe that the crossover field, where LMR sets in, decreases with increasing temperature. We propose that this cross over field can be used phenomenologically to estimate the strength of surface to bulk coupling.

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• Topological Insulator Materials
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Cited by in corpus (6)

• High Field Magneto-Transport of Mixed Topological Insulators Bi2Se3-xTex (x = 0, 1, 2 & 3)
• Spin-flop quasi metamagnetic, anisotropic magnetic, and electrical transport behavior of Ho substituted kagome magnet ErMn${}_6$Sn${}_6$
• Reducing the impact of bulk doping on transport properties of Bi-based 3D topological insulators
• Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb
• Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe
• Electronic correlations and topology in Kondo insulator PuB${}_6$