Valley-Polarized Exciton-Polaritons in a Monolayer Semiconductor
arXiv:1701.05579 · doi:10.1038/nphoton.2017.86
Abstract
Single layers of transition metal dichalcogenides are two-dimensional direct bandgap semiconductors with degenerate, but inequivalent, `valleys' in the electronic structure that can be selectively excited by polarized light. Coherent superpositions of light and matter, exciton-polaritons, have been observed when these materials are strongly coupled to photons, but these hybrid quasiparticles do not harness the valley-sensitive excitations of monolayer transition metal dichalcogenides. Here, we demonstrate evidence for valley polarized exciton-polaritons in monolayers of MoS embedded in a dielectric microcavity. Unlike traditional microcavity exciton-polaritons, these light-matter quasiparticles emit polarized light with spectral Rabi splitting. The interplay of cavity-modified exciton dynamics and intervalley relaxation in the high-cooperativity regime causes valley polarized exciton-polaritons to persist to room temperature, distinct from the vanishing polarization in bare monolayers. Achieving polarization-sensitive polaritonic devices operating at room temperature presents a pathway for manipulating novel valley degrees of freedom in coherent states of light and matter.
8 pages, 4 figures, and Supplementary Information
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- Microscopic theory of cavity-confined monolayer semiconductors: polariton-induced valley relaxation and the prospect of enhancing and controlling the valley pseudospin by chiral strong coupling
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- Self-Induced Valley Bosonic Stimulation of Exciton-Polaritons in a Monolayer Semiconductor
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