Electric- and magnetic-field dependence of the electronic and optical properties of phosphorene quantum dots

Abstract

Recently, black phosphorus quantum dots were fabricated experimentally. Motivated by these experiments, we theoretically investigate the electronic and optical properties of rectangular phosphorene quantum dots (RPQDs) in the presence of an in-plane electric field and a perpendicular magnetic field. The energy spectra and wave functions of RPQDs are obtained numerically using the tight-binding (TB) approach. We find edge states within the band gap of the RPQD which are well separated from the bulk states. In an undoped RPQD and for in-plane polarized light, due to the presence of well-defined edge states, we find three types of optical transitions which are between the bulk states, between the edge and bulk states, and between the edge states. The electric and magnetic fields influence the bulk-to-bulk, edge-to-bulk, and edge-to-edge transitions differently due to the different responses of bulk and edge states to these fields.

arXiv comment14 pages, 7 figures, will appear in Nanotechnology

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• Phosphorene quantum dot electronic properties and gas sensing
• Electronic properties of bilayer phosphorene quantum dots in the presence of perpendicular electric and magnetic fields
• Magnetic field dependence of electronic properties of MoS${}_2$ quantum dots with different edges
• Electrostatic quantum dot confinement in phosphorene
• Electronic transport and thermoelectric properties of phosphorene nanodisk under an electric field
• Confined electron states in two-dimensional HgTe in magnetic field: Quantum-dot versus quantum-ring behavior
• Insights into electronic and transport properties of phosphorene nanorings in two perpendicular directions: Effects of circular and elliptical external potentials