activity
20122023
most citedPolarization-driven topological insulator transition in a GaN/InN/GaN quantum well

178 citations · 231 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.str-el2023★ 1 cited

High Chern numbers in a perovskite-derived dice lattice (LaO)/(LaAlO)(111) with Ti, Mn and Co

Okan Köksal, L. L. Li, Rossitza Pentcheva

The dice lattice, containing a stack of three triangular lattices, has been proposed to exhibit nontrivial flat bands with nonzero Chern numbers, but unlike the honeycomb lattice i…

cond-mat.supr-con2021

Concomitant appearance of conductivity and superconductivity in (111)LaAlO3/SrTiO3 interface with metal capping

R. S. Bisht, M. Mograbi, P. K. Rout +7

In polar-oxide interfaces, a certain number of monolayers (ML) is needed for conductivity to appear. This threshold for conductivity is explained by accumulating sufficient electri…

cond-mat.mes-hall2016★ 17 cited

Exciton states in a circular graphene quantum dot: magnetic field induced intravalley to intervalley transition

L. L. Li, M. Zarenia, W. Xu +2

The magnetic-field dependence of the energy spectrum, wave function, binding energy and oscillator strength of exciton states confined in a circular graphene quantum dot (CGQD) are…

cond-mat.mes-hall2016★ 35 cited

Electric- and magnetic-field dependence of the electronic and optical properties of phosphorene quantum dots

L. L. Li, D. Moldovan, W. Xu +1

Recently, black phosphorus quantum dots were fabricated experimentally. Motivated by these experiments, we theoretically investigate the electronic and optical properties of rectan…

cond-mat.mtrl-sci2012★ 178 cited

Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well

M. S. Miao, Q. Yan, C. G. Van de Walle +3

Topological insulator (TI) states have been demonstrated in materials with narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can al…