Nanosecond magnetization dynamics during spin Hall switching of in-plane magnetic tunnel junctions

Abstract

We present a study of the magnetic dynamics associated with nanosecond scale magnetic switching driven by the spin Hall effect in 3-terminal nanoscale magnetic tunnel junctions (3T-MTJs) with in-plane magnetization. Utilizing fast pulse measurements in a variety of material stacks and detailed micromagnetic simulations, we demonstrate that this unexpectedly fast and reliable magnetic reversal is facilitated by the self-generated Oersted field, and the short-pulse energy efficiency can be substantially enhanced by micromagnetic curvature in the magnetic free layer. The sign of the Oersted field is essential for this enhancement --- in simulations in which we artificially impose a field-like torque with a sign opposite to the effect of the Oersted field, the result is a much slower and stochastic switching process that is reminiscent of the so-called incubation delay in conventional 2-terminal spin-torque-switched MTJs.

arXiv comment5 pages, 4 figures, 1 table

References in corpus (13)

• Spin torque switching with the giant spin Hall effect of tantalum
• Spin Hall effect
• Current-driven Magnetization Reversal and Spin Wave Excitations in Co/Cu/Co Pillars
• Magnetic switching by spin torque from the spin Hall effect
• Spin transfer torque devices utilizing the giant spin Hall effect of tungsten
• Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions
• Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction
• Nanosecond-timescale low error switching of in-plane magnetic tunnel junctions through dynamic Oersted-field assisted spin-Hall effect
• Enhancement of the Anti-Damping Spin Torque Efficacy of Platinum by Interface Modification
• Single-shot time-domain studies of spin-torque-driven switching in magnetic tunnel junctions
• Electric breakdown in ultra-thin MgO tunnel barrier junctions for spin-transfer torque switching
• Macrospin model of incubation delay due to the field-like spin transfer torque
• Effect of resistance feedback on spin torque-induced switching of nanomagnets

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• Efficient Switching of 3-Terminal Magnetic Tunnel Junctions by the Giant Spin Hall Effect of ${\mathrm{Pt}}_{85}{\mathrm{Hf}}_{15}$ Alloy
• A Perspective on Electrical Generation of Spin Current for Magnetic Random Access Memories
• Nanosecond Reversal of Three-Terminal Spin Hall Effect Memories Sustained at Cryogenic Temperatures