Electronic and optical properties of two-dimensional InSe from a DFT-parameterized tight-binding model
arXiv:1611.00262 · doi:10.1103/PhysRevB.94.245431
Abstract
We present a tight-binding (TB) model and theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all and valence orbitals on both indium and selenium atoms, with tight-binding parameters obtained from fitting to independently computed density functional theory (DFT) band structures for mono- and bilayer InSe. For the valence and conduction band edges of few-layer InSe, which appear to be in the vicinity of the point, we calculate the absorption coefficient for the principal optical transitions as a function of the number of layers, . We find a strong dependence on of the principal optical transition energies, selection rules, and optical oscillation strengths, in agreement with recent observations \cite{Bandurin2016}. Also, we find that the conduction band electrons are relatively light (), in contrast to an almost flat, and slightly inverted, dispersion of valence band holes near the -point, which is found for up to .
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