Electronic and optical properties of two-dimensional InSe from a DFT-parameterized tight-binding model

S. J. Magorrian, V. Zólyomi, V. I. Fal'ko

We present a tight-binding (TB) model and $\mathbf{k}\cdot \mathbf{p}$ theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all $s$ and $p$ valence…