van der Waals Heterostructures of Germanene, Stanene and Silicene with Hexagonal Boron Nitride and Their Topological Domain Walls

Abstract

We investigate van der Waals (vdW) heterostructures made of germanene, stanene or silicene with hexagonal Boron Nitride (h-BN). The intriguing topological properties of these buckled honeycomb materials can be maintained and further engineered in the heterostructures, where the competition between the substrate effect and external electric fields can be used to control the tunable topological phase transitions. Using such heterostructures as building blocks, various vdW topological domain walls (DW) are designed, along which there exist valley polarized quantum spin Hall edge states or valley-contrasting edge states which are protected by valley(spin)- resolved topological charges and can be tailored by the patterning of the heterojunctions and by external fields.

arXiv comment8 pages, 6 figures, to appear in prb

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Cited by in corpus (13)

• Structural, Vibrational and Electronic Properties of Single Layer Hexagonal Crystals of Groups IV and V
• Band Gap Opening in Stanene Induced by Patterned B-N doping
• Quantum anomalous Hall effect in stable 1T-YN${}_2$ monolayer with a large nontrivial band gap and high Chern number
• Pure spin current and perfect valley filter by designed separation of the chiral states in two-dimensional honeycomb lattices
• Current partition at zero-line intersection of quantum anomalous Hall topologies
• Metallic Network of Topological Domain Walls
• Gallium Bismuth Halides GaBi-X2 (X= I, Br, Cl) Monolayers with Distorted Hexagonal Framework: Novel Room-Temperature Quantum Spin Hall Insulators
• Floquet High Chern Insulators in Periodically Driven Chirally Stacked Multilayer Graphene
• Layer Zero-Line Modes in Antiferromagnetic Topological Insulators
• 2D Ladder polyborane: an ideal Dirac semimetal with a multi-feld-tunable band gap
• Electronic properties of silicene in BN/silicene van der Waals heterostructures
• Physical Origin of Current Partition at a Topological Trifurcation
• Tailoring topological states in silicene using different halogen-passivated Si(111) substrates