Influence of rhombohedral stacking order in the electrical resistance of bulk and mesoscopic graphite

Abstract

The electrical, in-plane resistance as a function of temperature $R(T)$ of bulk and mesoscopic thin graphite flakes obtained from the same batch was investigated. Samples thicker than $\sim 30$ nm show metalliclike contribution in a temperature range that increases with the sample thickness, whereas a semiconductinglike behavior was observed for thinner samples. The temperature dependence of the in-plane resistance of all measured samples and several others from literature can be very well explained between 2 K and 1100 K assuming three contributions in parallel: a metalliclike conducting path at the interfaces between crystalline regions, composed of two semiconducting phases, i.e. Bernal and rhombohedral stacking. From the fits of $R(T)$ we obtain a semiconducting energy gap of $110\pm 20$meV for the rhombohedral and $38\pm 8$meV for the Bernal phase. The presence of these crystalline phases was confirmed by x-ray diffraction measurements. We review similar experimental data from literature of the last 33 years and two more theoretical models used to fit $R(T)$.

11 pages, 10 figures

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• Nonintrinsic origin of the magnetic-field-induced metal-insulator and electronic phase transitions in graphite
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• Record-Breaking Magnetoresistance at the Edge of a Microflake of Natural Graphite
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