Novel Diamond Anvil Cell for Electrical Measurements using Boron-doped Metallic Diamond Electrodes

Abstract

A novel diamond anvil cell suitable for electrical transport measurements under high pressure has been developed. A boron-doped metallic diamond film was deposited as an electrode onto a nano-polycrystalline diamond anvil using a microwave plasma-assisted chemical vapor deposition technique combined with electron beam lithography. The electrical transport measurements of Pb were performed up to 8 GPa, and the maximum pressure reached was above 30 GPa. The boron-doped metallic diamond electrodes showed no signs of degradation after repeated compression measurements.

References in corpus (2)

• Conventional superconductivity at 203 K at high pressures
• Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature

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