Demonstration of Electric Double Layer Gating under High Pressure by the Development of Field-Effect Diamond Anvil Cell

Shintaro Adachi; Ryo Matsumoto; Sayaka Yamamoto; Takafumi D. Yamamoto; Kensei Terashima; Yoshito Saito; Miren Esparza Echevarria; Pedro Baptista de Castro; Peng Song; Suguru Iwasaki; Hiroyuki Takeya; Yoshihiko Takano

doi:10.1063/5.0004973

paper

Demonstration of Electric Double Layer Gating under High Pressure by the Development of Field-Effect Diamond Anvil Cell

arXiv:2002.09835 · doi:10.1063/5.0004973

Abstract

We have developed an approach to control the carrier density in various material under high pressure by the combination of an electric double layer transistor (EDLT) with a diamond anvil cell (DAC). In this study, this EDLT-DAC was applied to a Bi thin film, and here we report the field-effect under high pressure in the material. Our EDLT-DAC is a promising device for exploring unknown physical phenomena such as high transition-temperature superconductivity (HTS).

10 pages, 4 figures