Pressure-induced Superconductivity in Sulfur-doped SnSe Single Crystal Using Boron-doped Diamond Electrode-prefabricated Diamond Anvil Cell

Abstract

Sulfur-doped SnSe single crystal was successfully synthesized using a melt and slow-cooling method. The chemical composition and valence state of the obtained sample were analyzed by X-ray photoelectron spectroscopy. The pressure range of a diamond anvil cell with boron-doped diamond electrodes was upgraded to 104 GPa using nano-polycrystalline diamond anvil to investigate a pressure effect for the sample. Electrical resistivity measurements of sulfur-doped SnSe single crystal showed the insulator-metal-superconductor transition by applying high pressure up to 75.9 GPa.

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• Pressure Effect in Bi-2212 and Bi-2223 Cuprate Superconductor
• Pressure-induced Insulator to Metal Transition of Mixed Valence Compound Ce(O,F)SbS${}_2$
• Demonstration of Electric Double Layer Gating under High Pressure by the Development of Field-Effect Diamond Anvil Cell
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• Pressure-induced superconductivity in layered pnictogen diselenide NdO${}_{0.8}$F${}_{0.2}$Sb${}_{1-x}$Bi${}_x$Se${}_2$ (x = 0.3 and 0.7)
• Robustness of superconductivity to external pressure in high-entropy-alloy-type metal telluride AgInSnPbBiTe5
• Sub-micron Circuit Fabrication on Diamond Anvils for Mesoscopic High-Pressure Experiments