Pressure-induced Superconductivity in Sulfur-doped SnSe Single Crystal Using Boron-doped Diamond Electrode-prefabricated Diamond Anvil Cell
arXiv:1807.08843 · doi:10.7566/JPSJ.87.124706
Abstract
Sulfur-doped SnSe single crystal was successfully synthesized using a melt and slow-cooling method. The chemical composition and valence state of the obtained sample were analyzed by X-ray photoelectron spectroscopy. The pressure range of a diamond anvil cell with boron-doped diamond electrodes was upgraded to 104 GPa using nano-polycrystalline diamond anvil to investigate a pressure effect for the sample. Electrical resistivity measurements of sulfur-doped SnSe single crystal showed the insulator-metal-superconductor transition by applying high pressure up to 75.9 GPa.