Pressure-induced superconductivity in SnSb2Te4
arXiv:1907.02381 · doi:10.1088/1361-648X/ab76e2
Abstract
We report the discovery of a new superconductor from phase change materials SnSb2Te4. Single crystals of SnSb2Te4 were grown using a conventional melting-growth method. The sample resistance under pressure was measured using an originally designed diamond anvil cell with boron-doped diamond electrodes. The pressure dependence of the resistance has been measured up to 32.6 GPa. The superconducting transition of SnSb2Te4 appeared at 2.1 K(Tconset) under 8.1 GPa, which was further increased with applied pressure to a maximum onset transition temperature 7.4K under 32.6 GPa.
References in corpus (12)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- Pressure induced Superconductivity in Topological Compound Bi2Te3
- Superconductivity in Topological Insulator Sb2Te3 Induced by Pressure
- Thermal Expansion Coefficients of BiSe and SbTe Crystals from 10 K to 270 K
- Structural, Thermal, Magnetic and Electronic Transport Properties of the LaNi2(Ge{1-x}P{x})2 System
- High pressure transport properties of the topological insulator Bi2Se3
- Novel Diamond Anvil Cell for Electrical Measurements using Boron-doped Metallic Diamond Electrodes
- Data-driven Exploration of New Pressure-induced Superconductivity in PbBiTe with Two Transition Temperatures
- Superconductivity in multiple phases of compressed GeSb2Te4
- Data-driven Exploration of Pressure-Induced Superconductivity in AgInSe
- Superconductor-insulator transition in fcc-GeSb2Te4 at elevated pressures