Quantum electronic transport of topological surface states in beta-Ag2Se nanowire

Abstract

Single-crystalline β-Ag2Se nanostructures, a new class of 3D topological insulators (TIs), were synthesized using the chemical vapor transport method. The topological surface states were verified by measuring electronic transport properties including the weak antilocalization effect, Aharonov-Bohm oscillations, and Shubnikov-de Haas oscillations. First-principles band calculations revealed that the band inversion in \b{eta}-Ag2Se is caused by strong spin-orbit coupling and Ag-Se bonding hybridization. These extensive investigations provide new meaningful information about silver-chalcogenide TIs that have anisotropic Dirac cones, which could be useful for spintronics applications.

12 pages, 5 figures

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Cited by in corpus (11)

• Probing Spin Helical Surface States in Topological HgTe Nanowires
• Conditions for fully gapped topological superconductivity in topological insulator nanowires
• Magnetotransport signatures of three-dimensional topological insulator nanostructures
• Adjustable quantum interference oscillations in Sb-doped Bi2Se3 topological insulator nanoribbons
• Macroscopic Quantum Tunneling in Superconducting Junctions of β-Ag${}_2$Se Topological Insulator Nanowire
• Quantum Interference Effects in Topological Nanowires In a Longitudinal Magnetic Field
• Superconducting Quantum Interference Devices Made of Sb-doped Bi2Se3 Topological Insulator Nanoribbons
• Nodal surface and persistent spin texture in a Weyl semimetal without mirror symmetry
• Optimal Conditions for Observing Fractional Josephson Effect in Topological Josephson Junctions
• Spinor-dominated magnetoresistance driven by the topological phase transition in $\beta$-Ag${}_2$Se
• Gate-Modulated Quantum Interference Oscillations in Sb-Doped Bi2Se3 Topological Insulator Nanoribbon