Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO${}_3$-SrTiO${}_3$-Based Heterostructures

Abstract

The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO${}_3$-SrTiO${}_3$ heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 μm, with a characteristic behavior comparable to semiconducting devices. With the fabrication of field-effect transistors with gate lengths as small as 60 nm the results demonstrate the possibility to fabricate by electron-beam lithography functional devices based on complex oxides with characteristic lengths of several ten nanometers.

arXiv commentTo be published in Phys. Rev. Applied

References in corpus (9)

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Cited by in corpus (7)

• Photoferroelectric oxides
• Quantum-Matter Heterostructures
• Gate-tunable band structure of the LaAlO${}_3$-SrTiO${}_3$ interface
• SrTiO${}_3$ termination control: A method to tailor the oxygen exchange kinetics
• Understanding Leakage Currents through $A{l}_2{O}_3$ on $SrTi{O}_3$
• Evolution of ferromagnetism in two-dimensional electron gas of LaTiO3/SrTiO3
• A Laser-ARPES View of the 2D Electron Systems at LaAlO3/SrTiO3 and Al/SrTiO3 Interfaces