Impact of tunnel barrier strength on magnetoresistance in carbon nanotubes

Abstract

We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both temperature and bias voltage dependence clearly indicate tunneling magnetoresistance as the origin. We show that this effect is significantly affected by the tunnel barrier strength, which appears to be one reason for the variation between devices previously detected in similar structures. Modeling the data by means of the scattering matrix approach, we find a non-trivial dependence of the magnetoresistance on the barrier strength. Furthermore, analysis of the spin precession observed in a nonlocal Hanle measurement yields a spin lifetime of ${\tau }_s=1.1$ns, a value comparable with those found in silicon- or graphene-based spin valve devices.

10 pages, 5 figures, 1 table

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Cited by in corpus (2)

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• Gate-voltage response of a one-dimensional ballistic spin valve without spin-orbit interaction