Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2
arXiv:1510.06694 · doi:10.1002/adma.201302046
Abstract
Joule-heating induced conductance-switching is studied in VO2, a Mott insulator. Complementary in-situ techniques including optical characterization, blackbody microscopy, scanning transmission x-ray microscopy (STXM) and numerical simulations are used. Abrupt redistribution in local temperature is shown to occur upon conductance-switching along with a structural phase transition, at the same current.
References in corpus (4)
Cited by in corpus (23)
- Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
- Fast Spiking of a Mott VO2-Carbon Nanotube Composite Device
- Sequential Electronic and Structural Transitions in VO2 Observed Using X-ray Absorption Spectromicroscopy
- Current localisation and redistribution as the basis of discontinuous current controlled negative differential resistance in NbOx
- Random Field Driven Spatial Complexity at the Mott Transition in VO2
- The phase transition in VO2 probed using x-ray, visible and infrared radiations
- Resistive switching in reverse: voltage driven formation of a transverse insulating barrier
- Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature
- Extruded Mg based hybrid composite alloys studied by longitudinal impression creep
- Negative Differential Resistance in Carbon-Based Nanostructures
- A hybrid optoelectronic Mott insulator
- Proliferation of metallic domains caused by inhomogeneous heating near the electrically-driven transition in VO nanobeams
- Voltage-controlled magnetism enabled by resistive switching
- Evidence for current-induced phase coexistence in CaRuO and its influence on magnetic order
- Influence of thermal boundary conditions on the current-driven resistive transition in microbridges
- Multibridge VO2-Based Resistive Switching Devices in a Two-Terminal Configuration
- Bolometric arrays and infrared sensitivity of VO2 films with varying stoichiometry
- Mechanism of the Resistivity Switching Induced by the Joule Heating in Crystalline NbO
- Multi-Fields Modulation of Physical Properties of Oxide Thin Films
- Multifocal Terahertz Lens with Adjustable Focal Points
- Ovonic switches enable energy-efficient dendrite-like computing
- Current-induced successive structural phase transitions beyond thermal equilibrium in single-crystal VO2
- Infrared properties of micromachined vanadium oxide thin films