Influence of thermal boundary conditions on the current-driven resistive transition in $\mathbf{V}{\mathbf{O}}_2$ microbridges

Abstract

We investigate the resistive switching behaviour of $\mathrm{V}{\mathrm{O}}_2$ microbridges under current bias as a function of temperature and thermal coupling with the heat bath. Upon increasing the electrical current bias, the formation of the metallic phase can progress smoothly or through sharp jumps. The magnitude and threshold current values of these sharp resistance drops show random behaviour and are dramatically influenced by thermal dissipation conditions. Our results also evidence how the propagation of the metallic phase induced by electrical current in $\mathrm{V}{\mathrm{O}}_2$, and thus the shape of the resulting high-conductivity path, are not predictable. We discuss the origin of the switching events through a simple electro-thermal model based on the domain structure of $\mathrm{V}{\mathrm{O}}_2$ films that can be useful to improve the stability and controllability of future $\mathrm{V}{\mathrm{O}}_2$-based devices.

6 pages, 4 figures

References in corpus (4)

• Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide
• Programmable Mechanical Resonances in MEMS by Localized Joule Heating of Phase Change Materials
• Materials Design using Correlated Oxides: Optical Properties of Vanadium Dioxide
• Influence of thermal boundary conditions on the current-driven resistive transition in $\mathbf{V}{\mathbf{O}}_2$ microbridges

Cited by in corpus (3)

• Influence of thermal boundary conditions on the current-driven resistive transition in $\mathbf{V}{\mathbf{O}}_2$ microbridges
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• Oxide Membranes from Bulk Micro-Machining of SrTiO${}_3$ substrates