Resistive switching in reverse: voltage driven formation of a transverse insulating barrier

Abstract

Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting filaments parallel to the current flow, has been an active research topic. Here we present the discovery of an opposite, metal-to-insulator switching that proceeds via nucleation and growth of an insulating barrier perpendicular to the driving current. The barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. Electrically inducing a transverse barrier enables a novel approach to voltage-controlled magnetism. By triggering a metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism can be achieved by a global voltage bias applied to the whole device.

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Cited by in corpus (7)

• Light induced decoupling of electronic and magnetic properties in manganites
• Voltage-controlled magnetism enabled by resistive switching
• Magnetoresistance anomaly during the electrical triggering of a metal-insulator transition
• Voltage control of spin resonance in phase change materials
• Coexistance of volatile and non-volatile memristive effects in phase-separated La${}_{0.5}$Ca${}_{0.5}$MnO${}_3$-based devices
• Dynamic nanoscale spatial heterogeneity in a perovskite to brownmillerite topotactic phase transformation
• Volatile resistive-switched state in a bulk organic conductor with a sharp metal-insulator transition