436 citations · 1.8k across the 20 of their papers we have counts for
20 papers
Contact Engineering High Performance n-Type MoTe2 Transistors
Michal J. Mleczko, Andrew C. Yu, Christopher M. Smyth +7
Semiconducting MoTe2 is one of the few two-dimensional (2D) materials with a moderate band gap, similar to silicon. However, this material remains under-explored for 2D electronics…
Application of single-electron effects to fingerprints of chips using image recognition algorithms
T. Tanamoto, Y. Nishi, K. Ono
Single-electron effects have been widely investigated as a typical physical phenomenon in nanoelectronics. The single-electron effect caused by trap sites has been observed in many…
Oxygen migration during resistance switching and failure of hafnium oxide memristors
Suhas Kumar, Ziwen Wang, Xiaopeng Huang +7
While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights requ…
Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors
Suhas Kumar, Noraica Davila, Ziwen Wang +6
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 μW) and energy (<200 fJ/bit/μm2), low read-power (~nW), and high endur…
Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors
Suhas Kumar, Ziwen Wang, Xiaopeng Huang +7
Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating po…
High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2
Michal J. Mleczko, Runjie, Xu +6
Two-dimensional (2D) semimetals beyond graphene have been relatively unexplored in the atomically-thin limit. Here we introduce a facile growth mechanism for semimetallic WTe2 crys…