Oxygen migration during resistance switching and failure of hafnium oxide memristors

Abstract

While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the role of oxygen migration during ageing and failure remain to be detailed. Such detailing will enable failure-tolerant design, which can lead to enhanced performance of memristor-based next-generation storage-class memory. Here we directly observed lateral oxygen migration using in-situ synchrotron x-ray absorption spectromicroscopy of HfOx memristors during initial resistance switching, wear over millions of switching cycles, and eventual failure, through which we determined potential physical causes of failure. Using this information, we reengineered devices to mitigate three failure mechanisms, and demonstrated an improvement in endurance of about three orders of magnitude.

arXiv comment5 pages, 4 figures

References in corpus (5)

• Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors
• Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
• Sequential Electronic and Structural Transitions in VO2 Observed Using X-ray Absorption Spectromicroscopy
• Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors
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• End-to-End Memristive HTM System for Pattern Recognition and Sequence Prediction
• Exploring leakage in dielectric films via automated experiment in scanning probe microscopy
• Comparison of Update and Genetic Training Algorithms in a Memristor Crossbar Perceptron