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Oxygen migration during resistance switching and failure of hafnium oxide memristors
Suhas Kumar, Ziwen Wang, Xiaopeng Huang +7
While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights requ…
Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors
Suhas Kumar, Noraica Davila, Ziwen Wang +6
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 μW) and energy (<200 fJ/bit/μm2), low read-power (~nW), and high endur…
Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors
Suhas Kumar, Ziwen Wang, Xiaopeng Huang +7
Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating po…