Enhanced Seebeck effect in graphene devices by strain and doping engineering
arXiv:1505.06474 · doi:10.1016/j.physe.2015.05.020
Abstract
In this work, we investigate the possibility of enhancing the thermoelectric power (Seebeck coefficient) in graphene devices by strain and doping engineering. While a local strain can result in the misalignment of Dirac cones of different graphene sections in the k-space, doping engineering leads to their displacement in energy. By combining these two effects, we demonstrate that a conduction gap as large as a few hundreds meV can be achieved and hence the enhanced Seebeck coefficient can reach a value higher than 1.4 mV/K in graphene doped heterojunctions with a locally strained area. Such hetero-channels appear to be very promising for enlarging the applications of graphene devices as in strain and thermal sensors.
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- Highly anisotropic thermoelectric properties of carbon sulfide monolayers
- Effect of screening on Seebeck coefficient in bilayer graphene/AlGaAs electron gas
- Modulation of Semiconductor Superlattice Thermopower Through Symmetry and Strain