Photogating of mono- and few-layer MoS2
arXiv:1503.00568 · doi:10.1063/1.4916517
Abstract
We describe a photogating effect in mono- and few-layer MoS2, which allows the control of the charge carrier density by almost two orders of magnitude without electrical contacts. Our Raman studies are consistent with physisorbed environmental molecules, that effectively deplete the intrinsically n-doped charge carrier system via charge transfer, and which can be gradually removed by the exposure to light. This photogating process is reversible and precisely tunable by the light intensity. The photogating efficiency is quantified by comparison with measurements on electrostatically gated MoS2.
References in corpus (6)
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
- Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding
- Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
- Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes
- Temperature-activated layer-breathing vibrations in few-layer graphene